In principle, semiconductor refrigeration chips can only be regarded as tools for heat transfer. Although the refrigeration chip actively dissipates heat to the chip, it still needs to dissipate the heat generated by the hot end to a higher location than the chip. During the operation of the refrigeration unit, as long as there is a temperature difference between the cold and hot ends, heat is continuously transferred through the lattice, transferring it to the hot end and dissipating it through the heat dissipation device. Therefore, the refrigeration chip is the active cooling device of the chip, but it can only be regarded as the active thermal conduction device of the entire system. So the ZENO96 intelligent heat dissipation version with semiconductor heat dissipation device still needs to adopt active heat dissipation to cool the hot end of the heat dissipation plate. The main function of fans and heat sinks is to dissipate heat from the hot end of the cooling fins. Usually, without a cooling device, the temperature at the hot end can reach around 100 degrees, which easily exceeds the load-bearing limit of the refrigeration unit. Moreover, the key to semiconductor refrigeration efficiency is to quickly reduce the temperature at the hot end to increase the temperature difference between the two ends and improve the refrigeration effect. Therefore, using large heat sinks and active cooling fans at the hot end will contribute to the excellent performance of the cooling system. Under normal use, the temperature difference between the cold and hot ends will remain between 40 and 65 degrees. When an N-type semiconductor material and a P-type semiconductor material are connected to form an electrical coupling, energy transfer can occur when direct current is applied in the circuit. The current flows from the junction of the N-type element to the junction of the P-type element to absorb heat, becoming the cold end, and from the junction of the P-type element to the N-type element to release heat, becoming the hot end. The magnitude of heat absorption and release is determined by the magnitude of the current and the logarithm of the elements N and p in the semiconductor material. The following three points are the thermoelectric effects of thermoelectric refrigeration.

1. Seebeck effect In 1822, Zeebek of Germany discovered that when two different conductors are connected, if the two connection points maintain different temperature differences, a thermoelectric electromotive force will be generated in the conductor: es=S. △ T, where ES is the thermoelectric electromotive force S is the thermoelectric electromotive force rate (Zeebek coefficient) △ T is the temperature difference between the connection points

2. Peltier effect In 1834, the Frenchman Peltier discovered the Seebeck effect, which means that when current flows through a junction formed by two different conductors, heat release and absorption occur at the junction, and the magnitude of the heat release or absorption is determined by the magnitude of the current. Q л=л. I л=aTc formula: Q π is the heat release or absorption power π is the proportionality coefficient, called the Peltier coefficient I is the working current A is the thermoelectric electromotive force rate Tc is the cold junction temperature

3. Thomson Effect: When current flows through a conductor with a temperature gradient, in addition to Joule heating generated by the conductor's resistance, the conductor also emits or absorbs heat. The heat released or absorbed between two points of a conductor with a temperature difference △ T is: Q τ=τ I. △ TQ τ is the heat release or absorption power τ is the Thomson coefficient I is the operating current △ T is above the temperature gradient. Until the 1950s, Academician Yue Fei from the Institute of Semiconductors of the Soviet Academy of Sciences conducted extensive research on semiconductors and published his research results in 1954. The solid solution of bismuth telluride compound has good refrigeration effect and is the earliest and most important thermoelectric semiconductor material. It is still the main component of semiconductor materials in temperature difference refrigeration. After the application of Fei's theory in practice, in the 1960s, many scholars conducted research on the quality factor of semiconductor refrigeration materials, which reached a considerable level and were widely used, namely the current semiconductor refrigeration chips in China. China's semiconductor refrigeration technology began in the late 1950s and early 1960s, and was one of the earliest research institutions in the world at that time. In the mid-1960s, the performance of semiconductor materials reached international standards. From the late 1960s to the early 1980s, it was a major step in the development of semiconductor refrigeration technology in China. During this period, on the one hand, the quality factors of semiconductor refrigeration materials were improved, and on the other hand, their application fields were expanded.